Depth profile high - energy spectroscopic study of Mn - doped GaN prepared by thermal diffusion

We have performed an in-situ depth profile study of Mn-doped GaN prepared by a low temperature thermal diffusion method using photoemission and x-ray absorption spectroscopy. It was revealed from the core-level pho-toemission measurements that Mn ions are diffused into a deep (∼ 70Å) region of the GaN substrates and that the line shapes of Mn 3d partial density of states obtained by resonant photoemission measurements was close to that of Ga 1−x Mn x N thin films grown by molecular-beam epitaxy. From x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements at the Mn Ledge , it was revealed that the doped Mn ions were in the divalent Mn 2+ state and primarily paramagnetic. In mag-netization measurements, weak hysteresis was detected in samples prepared using p-type GaN substrates while samples using n-type GaN substrates showed only paramagnetism.